Abstract
A pulsed ion-beam evaporation (IBE) technique is used to ablate Si species from bulk Si target onto quartz substrates. Large round-shaped droplets up to a few μm are predominantly formed in vacuum, whereas introduction of He gas could result in formation of particles with decreased size up to a few hundreds nm. A slight oxidation of Si particles is found even in vacuum condition, revealed by surface composition analysis using X-ray photoelectron spectroscopy (XPS). Note that the presence of He ambient obviously promotes the oxidation of as-deposited Si species. The changes in morphology and composition of formed Si particles are attributable to an enhanced interaction between ablated Si plume and the ambient gas with an increased pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
