Abstract
InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550–730°C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650°C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700°C while retaining their optical quality.
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