Abstract
AbstractAl0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3‐MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In‐situ high‐energy electron diffraction (RHEED), double‐crystal X‐ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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