Abstract
This paper discusses the effects of extended temperature change time of InGaN well growth on the luminescent properties of blue LEDs with sapphire substrate. Extending the temperature change time will increase the area of the In composition gradient in the quantum well, thereby changing the PL luminescence peak shape, which is conducive to increasing the brightness of the LED. The change of EL-luminescent peaks under different current is further studied. In combination with PL, the source of the shoulder peak on the long-wave-side of the main luminescent peak in the blue light InGaN quantum well growing on the sapphire substrate is explored under normal temperature condition. One illumination mechanism related to a main illuminating center provides a research direction for the improvement of the photoelectric performance of the blue-light LED.
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