Abstract
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ∼1 μm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 °C, which removes the gallium interstitials.
Highlights
Semiconductor nanowires are considered as versatile and functional building blocks for future nano-optoelectronic and nano-electronic devices due to their unique physical properties [1,2,3,4,5,6,7]
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ∼1 μm, aiming to increase their light emitting efficiency
Changes in the growth temperature have a profound effect on the PL spectra of the GaNAs NWs
Summary
Semiconductor nanowires are considered as versatile and functional building blocks for future nano-optoelectronic and nano-electronic devices due to their unique physical properties [1,2,3,4,5,6,7]. As to GaNAs-based NWs, effects of growth temperature and post-growth annealing on their structural and optical quality are not known and will be addressed in this paper by employing photoluminescence (PL) and optically detected magnetic resonance (ODMR) spectroscopies. The emission shifts to lower energies in the GaNAs NWs, which suggests that the optically active region in these structures is the GaNAs shell with a lower bandgap.
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