Abstract
In1-xGaxAs0.85P0.15 (0.35 ≤x ≤0.45) epitaxial layers having a composition lying within the miscibility gap and with strain ranging from -0.5% (tension) to +0.3% (compression) were grown on InP (001) substrates using metalorganic molecular beam epitaxy (MOMBE) at growth rates of 0.25 and 0.46 nm/s. Double crystal X-ray diffraction (DCXRD) was mainly used to characterize the structural properties of lateral compositional modulation (LCM). Asymmetric (224) rocking scans show that the modulation period of the LCM is approximately 100 nm and that the amplitudes of the LCM for 0.46 nm/s samples are smaller than those for 0.25 nm/s ones in the entire composition range. Cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements were also performed for the same samples. Each of these investigations indicates that increasing the growth rate reduces the LCM.
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