Abstract
I studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability (∼800° C) and acted as nuclei of oxygen precipitates. I found that the concentration of recombination centers was highest at the center along the radius of the ingot and decreases with increasing distance from the center along the radius of the ingot. This is caused by the distribution of grown-in hydrogen along the radius. Its profile is formed by the out-diffusion of hydrogen during crystal growth.
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