Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

Abstract

Permingeatites Cu3Sb1−yGeySe4 (0 ≤ y ≤ 0.14) were synthesized by mechanical alloying and hot pressing. The charge-transport parameters (Hall coefficient, carrier concentration, mobility, and Lorenz number) and thermoelectric properties (electrical conductivity, Seebeck coefficient, power factor, thermal conductivity, and figure of merit) were examined with respect to the Ge doping level. A single permingeatite phase with a tetragonal structure was obtained without subsequent heat treatment, but a small amount of the secondary phase Cu2GeSe3 was found for the specimens with y ≥ 0.08. All hot-pressed compacts exhibited a relative density of 97.5%–98.3%. The lattice constants of the a-axis and c-axis were decreased by the substitution of Ge at the Sb sites. As the Ge content increased, the carrier concentration increased from 5.2 × 10<sup>18</sup> to 1.1 × 10<sup>20</sup> cm<sup>−3</sup>, but the mobility decreased from 92 to 25 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>. The Lorenz number of the undoped Cu3SbSe4 implied a non-degenerate semiconductor behavior, ranging from (1.57–1.56) × 10<sup>−8</sup> V<sup>2</sup>·K<sup>−2</sup> at 323–623 K. The thermoelectric figure of merit was 0.39 at 623 K, resulting from a power factor of 0.49 mW·m<sup>−1</sup>·K<sup>−2</sup> and a thermal conductivity of 0.76 W·m<sup>−1</sup>·K<sup>−1</sup>. However, the Lorenz numbers of the Gedoped specimens indicated degenerate semiconductor characteristics, increasing to (1.63–1.94) × 10<sup>−8</sup> V<sup>2</sup>·K<sup>−2</sup> at 323–623 K. The highest thermoelectric figure of merit of 0.65 was at 623 K for Cu3Sb0.86Ge0.14Se4, resulting from the significantly improved power factor of 0.93 mW·m<sup>−1</sup>·K<sup>−2</sup> and the thermal conductivity of 0.89W·m<sup>−1</sup>·K<sup>−1</sup>. As a result, the thermoelectric properties were remarkably enhanced by doping Ge into the Sb sites of the permingeatite.