Abstract
Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics are described. The gate-oxide thickness of the device is 34 nm. The device has a radiation tolerance of 2*10/sup 5/ rad, which is four times higher than that of 100-nm gate-oxide device. Although the thin gate oxide increases input capacitance, reverse transfer capacitance is reduced by using the VDMOSFET cell structure with an additional p region. The VDMOSFET is suitable as a switching device for high-frequency switching power supplies used in communication satellites. >
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