Abstract
The effects of gamma-ray (γ-ray) irradiation on the channel mobility of enhancement-type n-channel 6H silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) with gate oxides annealed in a hydrogen atmosphere after pyrogenic oxidation were studied. Irradiation induced interface traps produced in the MOSFETs were evaluated using the associated change in the subthreshold-current curve. It was found that the MOSFET channel mobility depended on the net number of radiation-induced interface traps. By a detailed comparison with the radiation response of silicon MOSFETs, 6H–SiC MOSFETs are shown to exhibit a channel mobility with a much higher radiation resistance.
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