Abstract
Ce3+-doped Gd3(Al1-xGax)5O12 (Ce:GAGG) transparent ceramics were successfully prepared via a solid state reaction/oxygen sintering method. The effects of Ga substitution on the structure and optical properties of the ceramics were investigated. The highest quantum yield and relatively high scintillation light yield were achieved in the Gd3(Al0.6Ga0.4)5O12. The investigated processing technique demonstrated advantages such as increased flexibility and short processing time, thus being very cost effective. The investigated approach provides a much more economical alternative to the conventional melt growth processes used to fabricate single crystals.
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