Abstract
Copper indium gallium diselenide (CIGS) films were deposited as an absorber layer on polyethylene terephthalate (PET) substrates by a screen printing technique using CIGS ink with a Ga content ranging from 0.3 to 0.6. The melting point of PET substrate is 254.9°C; the average transmission in the visible (400nm–800nm) for PET substrates is greater than 85%. Effects of Ga content of the CIGS absorber layer on structural and electrical properties of the CIGS films were studied. The lattice parameters, a and c for all CIGS films were decreased with increasing Ga content. At room temperature, Hall mobility and charge-carrier concentration of the CIGS films varies from 97.2 to 2.69cm2V−1s−1 and 9.98×1016 to 3.23×1018cm−3, respectively.
Published Version
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