Abstract
Charge defects in MOS capacitors formed with fluorine-incorporated oxides are analyzed by Fowler-Nordheim (F-N) tunnelling injection stress. Like previous studies, fluorinated gate oxides prove to have better performance in aspects of overall flatband voltage shifts and interface trapped charge density. However, these advantages result from more complex combinations of effects. In this study, comparisons of induced charging components between fluorinated and control oxides expose complicated variations of trapped charge generation in both bulk and interface regions. A relationship is found between the amount of fluorine at/near the Si/SiO/sub 2/ interface and induced charges in the bulk.
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