Abstract
In this paper, we studied the superconducting properties of the LaSi2(00l)/Si(100) single-crystalline thin films prepared by the molecular beam epitaxy (MBE) method with different thicknesses via electro-transport and magnetic properties measurements. The S50 (sample with deposition thickness around 50 nm) exhibits the highest superconducting transition temperature (Tc) of 2.62 K, which is higher than that of the bulk LaSi2. The variation of Tc with film thickness is within 8%. In addition, the upper critical field (Hc2) increases with reducing film thickness. Especially for the thinnest LaSi2 film with deposition thickness around 10 nm, the Hc2 shows a sharp increase and the flux jump activity disappears, which is due to the defects and disorders from the interfacial effect. Our work completes the superconducting properties of LaSi2 films, which helps to understand the influence and modulation of film thickness on superconductivity in LaSi2 system.
Published Version
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