Abstract
The temperature dependence of electrical conductivity, free carrier concentration (holes), mobility and Seebeck coefficient of as-grown Bi2Te3 and Bi2Te2.9Se0.1 single crystals have been studied at temperatures ranging from 280–380 K. Composition and surface dislocations are determined using energy dispersive x-ray analysis and scanning electron microscopy. Hot probe and Hall effect measurements show that as-grown crystals are of p type. Effects on the electrical and Hall properties due to annealing and high-energy electron bombardment (8 MeV) are studied in the above temperature range. Incorporation of Se into the Te sublattice decreases the hole concentration, other transport parameters and the Seebeck coefficient. This observed phenomenon is explained on the basis of increased bond polarization theory. The experimentally observed activation energies are tabulated.
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