Effects of Excessive Bi on the Structure and the Properties of Aurivillius Bi$_{5.25}$La$_{0.75}$Fe$_{2}$Ti$_{3}$O$_{18}$ Thin Films

Abstract

The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi6Fe2Ti3O18 (Bi5.25La0.75Fe2Ti3O18) thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 × 10-5 A/cm2 at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2Pr) of 10.5 μC/cm2 and a low coercive field (2Ec) of 400 kV/cm at 485 kV/cm, were observed for the 5% Biexcess La-doped Bi6Fe2Ti3O18 thin film. The formation of a stable bismuth layer-structured phase, a lower c-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi6Fe2Ti3O18 thin film.