Abstract
physica status solidi (a)Volume 51, Issue 1 p. K83-K88 Short Note Effects of emitter diffusion-induced stresses on the common-emitter current gain of silicon planar transistors N. D. Stojadinović, N. D. Stojadinović Faculty of Electronic Engineering, University of Niš Search for more papers by this authorS. D. Ristić, S. D. Ristić Faculty of Electronic Engineering, University of Niš Search for more papers by this author N. D. Stojadinović, N. D. Stojadinović Faculty of Electronic Engineering, University of Niš Search for more papers by this authorS. D. Ristić, S. D. Ristić Faculty of Electronic Engineering, University of Niš Search for more papers by this author First published: 16 January 1979 https://doi.org/10.1002/pssa.2210510155Citations: 5 Beogradska 14, 18000 Niš, Yugoslavia. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume51, Issue116 January 1979Pages K83-K88 RelatedInformation
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