Abstract
physica status solidi (a)Volume 52, Issue 2 p. K129-K132 Short Note An approximation of the einstein relation for heavily doped silicon S. D. Ristić, S. D. Ristić Faculty of Electronic Engineering, University of Niš Search for more papers by this author S. D. Ristić, S. D. Ristić Faculty of Electronic Engineering, University of Niš Search for more papers by this author First published: 16 April 1979 https://doi.org/10.1002/pssa.2210520250Citations: 3 Beogradska 14, 18000 Niš, Yugoslavia. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume52, Issue216 April 1979Pages K129-K132 RelatedInformation
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
