Abstract
The effects of electron-hole scattering on the transient transport of minority electrons in room-temperature silicon is examined using an ensemble Monte Carte approach. The transport model includes the dynamics of both electrons and holes with coupling between the electron and hole systems through their Coulombic interaction. Calculations are reported for an acceptor concentration of 1018cm-3 with applied electric field strengths of 10 and 29 kV cm-1. The calculations show that electron-hole scattering reduces mobility, velocity overshoot and energy in both hot and cold valleys, and that the valley repopulation rate is reduced for an applied field of 10 kV cm-1 while at 20 kV cm-1 it is enhanced at times longer than one picosecond.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
