Abstract
Effects of electron heating on Shubnikov-De Haas oscillations are studied at 4.2 K. in n-AlGaAs/GaAs heterostructures. Electron temperatures T e are determined and found to depend mainly on the input power per electron P e, suggesting the energy relaxation time at low temperatures is independent of sample mobilities and approximately proportional to the inverse of carrier concentrations. When P e > 10 −13 W and T e > 40 K, extra peaks are observed in SdH oscillations, which can be attributed to the resonant emission of optical phonons. The electron heating is found to reduce the plateau width of quantized Hall resistivities, probably because such a heating causes the delocalization of electrons.
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