Abstract
We have grown Si SiGe modulation doped structures by gas source molecular beam epitaxy. Magnetotransport measurements were carried out on Hall bar structures at 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of a high quality two-dimensional electron gas in the Si channel. Electron mobilities up to 95 000 cm 2/V · s with sheet densities of about 8 × 10 11 cm −2 were obtained at low temperature. The oscillations in the magnetoresistance showed obvious damping as the electric field applied to the Hall bar was increased, indicating an effect of electron heating. Electron temperatures were derived from the oscillation ampitude damping and examined as a function of energy loss rate, which can be determined from the input power per electron in the steady state.
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