Abstract
The performance degradation of the I/ V and C/ V characteristics of Si 1− x Ge x S / D diodes irradiated by 2-MeV electrons and 70-MeV protons was investigated. After irradiation, the reverse current increases, while the forward current and reverse capacitance decrease. Based on considerations of the damage factor and coefficient for different fluences and radiation sources, the radiation damage becomes smaller with increase in germanium content. Also, for proton irradiation, the damage is about three orders of magnitude larger than for electrons due to the difference of particle mass and collision probability to produce displacement damage.
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