Abstract
Abstract We investigated the effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy (GSMBE) of diamond with pure methane (CH 4 ). Irradiating the C(001) surface with a 200 eV electron-beam at 800°C enhanced the growth rate (GR) ∼ 2–5 times over the method without irradiation. By using a CH 4 beam decomposed by electron impact in addition to the electron-beam irradiation, the GR was enhanced by > 100 times. However, the grown films contained an appreciable amount of amorphous carbon. By contrast, irradiating the surface with an atomic hydrogen beam enhanced the GR by about five-fold without the concurrent growth of amorphous carbon.
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