Abstract
A study of the effect of electrical bias and temperature stress (BTS) on the negative magnetoresistance (MR) of a low-k dielectric composed of SiCOH is presented. The magnitude of the structure's MR decreases with increased time on BTS. There is a correlation between the stress condition and the rate of MR decrease. The voltage and temperature dependencies of the MR decay resemble the dependencies observed for Time Dependent Dielectric Breakdown (TDDB) studies, suggesting that this MR response to BTS could be related to breakdown mechanisms and prove useful for studying the TDDB behavior of these materials. Possible mechanisms that could lead to such a decay in MR when subjected to BTS are discussed.
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