Abstract
We report the effect of external electric field (EEF) on the magnetic properties of \(\small {Mn_{x}Ge_{1-x}}\), diluted magnetic semiconductor. We present a Kondo Lattice Model type Hamiltonian with exchange coupling between localized spins, itinerant holes and the EEF. The magnetization, the dispersion and critical temperature (\(T_{c}\)) are calculated for different values of EEF parameters (\(\alpha\)) using double time temperature-dependent Green function formalism. The enhancement of the (\(T_{c}\)) with the EEF is shown to be very distinct and is in agreement with recent experimental observation and much required for spintronics applications and devices.
Highlights
We report the effect of external electric field (EEF) on the magnetic properties of MnxGe1Àx, diluted magnetic semiconductor
The carrier-mediated ferromagnetism observed in dilute magnetic semiconductors (DMS) has gained interest over the past decade due to the possibility of controlling the ferromagnetism and their potential applications in spintronics which use both the charge and spin degrees of freedom for electronic applications [1]
Mn-doped Ge DMS system showing magnetic ordering was successfully grown by molecular beam epitaxy (MBE) technique which are a good candidates of Gebased DMSs [7, 8]
Summary
The carrier-mediated ferromagnetism observed in dilute magnetic semiconductors (DMS) has gained interest over the past decade due to the possibility of controlling the ferromagnetism and their potential applications in spintronics which use both the charge and spin degrees of freedom for electronic applications [1]. Xiu et al [9] successfully fabricated self-assembled MnxGe1Àx DMSQDs (with x 1⁄4 0:05) without metallic precipitates such as Mn5Ge3 and Mn11Ge5 which showed electric field-controlled ferromagnetism, TC above 400 K The presence of such metallic clusters strongly affect the magnetic properties of the Mn-Ge DMS system [5]. Model (KLM) type Hamiltonian with the interaction of electric field with carrier spin and localized spin included, and can be written as. The second term arises from interaction of the holes and the localized moments with the external electric field (EEF) E. From the poles of the GF we can obtain the excitation spectrum of the magnon as xq
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