Effects of edge defects on β12 borophene nanoribbon conductance

Abstract

The conductance of β12-borophene nanoribbons (BNRs) with single edge defects and a weak disorder is studied within the framework of the tight-binding model by employing the Green function technique. It is found that single edge defects give rise to quasi-localized states adjacent to the defects, resulting in conductance dips at energies corresponding to the anti-resonance energy of the edge states and the quasi-localized states due to the edge defects. The results of the calculations indicate that the influence of a single vacancy on the conductance of a BNR is much larger than two vacancies, which can be attributed to the symmetry breaking of sublattices. A weak disorder at the edges of the nanoribbons affects the conductance slightly. As the strength of disorder potential increases, more localized eigenstates are created than the extended ones at the nanoribbon, which causes a conductor to semiconductor transition due to Anderson localization.