Abstract
Cu(InGa)Se/sub 2/ thin films with a Mo back contact and coated with a 30 nm of CdS layer, were implanted with doses from 10/sup 14/ to 10/sup 16/ cm/sup -2/ of 2.5 keV D/sup +/ at room temperature. Implanted and nonimplanted area were characterised using low temperature photoluminescence (PL). ZnO dot-contacts were then deposited by RF sputtering to produce ZnO/CdS/CIGS/Mo photovoltaic devices and the spectral photo-response measured. A broad band (A) at 1.07 eV dominated the PL spectra from the nonimplanted material. Implantation of D/sup +/ generated four new transitions in the PL spectra: three low energy peaks and a new peak at 1.1 eV. A considerable reduction in the blue shift (j-shift) of the main band with increasing excitation power followed implantation and was attributed to passivation effects of D/sup +/. Annealing at 100/spl deg/C for 30 min increased both the PL intensity and j-shift although the effect of passivation by D/sup +/ an the j-shift was only observed for the highest implanted dose following anneal.
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