Abstract
Cu(InGa)Se 2 thin films coated with a 30 nm CdS layer were implanted with doses of 10 14–10 16 cm −2 of 2.5 keV D + at room temperature. Implanted and non-implanted areas of the films were characterised using low-temperature photoluminescence (PL). A broad band (A) at 1.07 eV, attributed to the band-tail recombination, dominated the PL spectra from the non-implanted material. Implantation of D + generated four new transitions in the PL spectra: 3 low-energy peaks; and a dominant peak at 1.10 eV. The blue shift of the 1.10 eV band with excitation power rise was shown to be only half that of band A. This was attributed to the passivating effects of D + on the amplitude of the band-tail potential fluctuations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
