Abstract
The effects of dissolved oxygen on the electrochemical behavior and semiconductor properties of passive film formed on 316L SS in three solutions with different dissolved oxygen were studied by using polarization curve, Mott–Schottky analysis and the point defect model (PDM). The results show that higher dissolved oxygen accelerates both anodic and cathodic process. Based on Mott–Schottky analysis and PDM, the key parameters for passive film, donor density N d, flat-band potential E fb and diffusivity of defects D 0 were calculated. The results display that N d(1−7 × 10 27 m −3) and D 0(1−18 × 10 −16 cm 2/s) increase and E fb value reduces with the dissolved oxygen in solution.
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