Abstract
Wafer removal rates and defects were investigated for 200 mm tetraethyl orthosilicate (TEOS) oxide chemical mechanical planarization (CMP) processes using two types of CMP pads: a porous pad and a solid pad with micro-holes. An initial CMP test conducted with fumed silica based-slurry and a conditioner with 180 μm diamond revealed that the wafer removal rates by the solid pad with micro-holes were approximately 10% lower than those by the porous pad, but scratch type defects were reduced. In order to increase the removal rate of a solid pad with micro-holes to the comparable level of a regular porous pad without changing process parameters, it was decided to modify conditioner design by using different diamond size from 70 to 130 μm. It was found that wafer removal rates increased from 2973 to 2587 Å/min and defect counts reduced from 5.3 to 1.7 by decreasing the diamond size from 180 to 70 μm in the case of the solid pad with micro-holes. Various pad surface analysis results, including contact area estimation and microscopic observations, also revealed that a smaller diamond conditioner generated the pad texture with finer and more regular pad asperities.
Published Version
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