Abstract
This letter reports an investigation of the impact of device scaling on the performance of a junctionless FinFET due to gate-metal work function variability (WFV) and random dopant fluctuations (RDFs). Such investigation is made by using a 3-D numerical device simulator. Impacts of both WFV and RDF are found to increase with technology scaling when channel doping is also increased to meet the targeted $V_{T}/I_{\mathrm{\scriptscriptstyle OFF}}/I_{\mathrm{\scriptscriptstyle ON}}$ for the scaled technology nodes. Our investigations, however, suggest that the impact of RDF can be reduced significantly for scaled technology nodes if such target is met by keeping the channel doping unaltered and adjusting the gate-metal work function. This results in improved RDF-induced variability and deteriorated WFV-induced variability that in turn increases the relative impact of WFV for scaled technology nodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
