Abstract
The impact of random dopant fluctuation (RDF), work function variation (WFV) and oxide thickness fluctuation (OTF) on the statistical variability of the electrical performance of non-uniformly doped bulk junctionless (JL) FinFET has been studied using three dimensional TCAD simulations. We illustrate that by specifying the appropriate doping profile in the bulk JL FinFET, enhanced statistical variability and electrical characteristics can be achieved. Numerically, it is indicated by values of standard deviation of device parameters, that the performance parameters of a uniformly doped bulk JL FinFET are seriously influenced by statistical variation compared to its non-uniformly doped counterparts.
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