Abstract

To clarify the role of hydrogen in the Staebler-Wronski effect of a-Si:H, we have studied the effects of hydrogen incorporation and evolution on the light-induced changes in photoconductivity and spin density of a-Si:H. Our results suggest that the light-induced defects in a-Si:H are created through the breaking of weak SiSi bonds in the regions containing clustered hydrogen which effuses at low annealing temperature.

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