Abstract
Contact windows on phosphorus-diffused emitters have been made in layers of SiO 2 obtained by either thermal growth or CVD. Transistors with CVD oxide show a current gain which is 20 to 50 percent higher than that of transistors made with thermal oxide. TEM studies revealed stacking faults in the emitter region of transistors with CVD oxide, but dislocations for those with thermal oxide. We attribute the difference in current gain to the different crystallographic defect types in the neutral region of the emitter.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
