Abstract

CuxSrBi8Ti6.88Nb0.12O27 (CuxSBTN0.12, x = 0, 0.2, 0.4, 0.6) intergrowth bismuth layer structure ferroelectrics (BLSFs) has been prepared by modified oxalate route. XRD analysis indicates the formation of pure intergrowth BLSF phase for all compositions. SEM micrograph shows a dense microstructure formation due to the addition of CuO and grain size decreases with Nb doping. The T c of the ferroelectrics remains same with Nb doping. The dielectric constant at Curie temperature increases with the increase in Nb doping. The conductivity of ceramics is found to increase with increasing Nb doping. The remnant polarization and coercive field of Cu0.2SBTN0.04 ceramics is highest among all compositions due to its largest grain size as well as the highest resistivity among all compositions.

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