Abstract
CuInS2 thin films were prepared by sol–gel dip-coating method on glass substrates using 0.75, 1 and 1.25 ratios of Cu/In in the solution. The prepared films were annealed at 380°C, 420°C and 460°C for 30min under argon environment. The structural, optical, morphological and composition properties of those were investigated by X-ray diffraction (XRD), UV–vis transmittance spectroscopy and scanning electron microscopy with an energy dispersive X-ray spectrometer. The XRD results showed that the films exhibit polycrystalline tetragonal CuInS2 phase with (112) orientation. According to the EDX results the Cu/In ratios of the films were respectively 0.65, 0.92 and 1.35 for the Cu/In ratios of 0.75, 1 and 1.25 in the solutions. The optical band gap was found to be between 1.30eV and 1.43eV, depending on Cu/In ratio.
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