Abstract
Dielectric permittivity measurements are carried out to investigate the effects of confinement and electric field on a chiral smectic liquid crystal in the smectic- () phase for various cell thicknesses. The Sm-A* – transition temperature and the temperature range for which the phase is stable decrease with decreasing cell thickness. On reducing the cell thickness, the surface-induced mode appears, as a result of the influence of the cell substrates. This increases the dielectric strength of the phase. The distribution parameter of the relaxation process, α decreases significantly, and in the case of a thin cell, the decrease observed reflects a wide symmetric distribution of the relaxation process. On increasing the electric field, the dielectric strength decreases and the relaxation frequency increases in the phase. These are explained by the ‘helical fracture’ model, originally proposed for the Sm-C* phase.
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