Abstract
In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal–insulator–silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward).
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