Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

Abstract

Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction. We examine the optimal NiO oxygen content and Al insertion prove the mechanism which reduces reset current. It is observed that the reset current was greatly reduced down to 0.15mA using proposed Al-inserted NiO cell structure that successfully contributes to reset process.