Abstract
The effect of additional indium on copper indium gallium selenide (CIGS) thin films and solar cells was investigated with respect to potassium fluoride post-deposition treatment (KF-PDT) using current-voltage, external quantum efficiency, scanning electron microscopy, X-ray photoelectron spectroscopy, time-resolved photoluminescence and capacitance-voltage measurements. The cell performance, particularly open-circuit voltage (Voc) improved drastically by the combined treatments of additional indium deposition after CIGS growth and subsequent KF-PDT. A Cu deficient layer at the CIGS surface increased after both treatments rather than only KF-PDT. Photoluminescence intensity, lifetime and net carrier concentration of KF-untreated CIGS solar cells did not change significantly by only additional indium deposition. However, they improved because of the combined treatments. Copyright © 2017 John Wiley & Sons, Ltd.
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