Abstract
Now a day, copper indium gallium diselenide (CIGS) have earned special interest among thin film solar cells. The bandgap of CIGS can be varied by varying gallium composition to obtain required bandgap that meets the solar spectrum to absorb most of the photons. In present work, ITO/Mo/CIGS/CdS/ZnO/Al heterojunction thin film cell has been designed by computer simulation using AFROS-HET. The cell parameters like open circuit voltage (Voc), short circuit current (Isc), efficiency (η) and fillfactor is also evaluated under AM 1.5 radiation by keeping device temperature at 400K. The Electrical, Photoelectroluminescence characteristics and Quantum efficiency of the cell are also simulated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
