Abstract
The effects of chemical treatments and Al2O3 deposition on the InAlN surface were investigated by X-ray photoelectron spectroscopy (XPS). Independent of the extent of native oxide removal, the In 4d core-level binding energy was the same for untreated, HCl-treated, and HF-treated InAlN. This indicated a strong pinning tendency of the Fermi level at the InAlN bare surface. However, a 300 meV decrease in the In 4d binding energy was observed after atomic layer deposition (ALD) of Al2O3, which indicated an increase in the negative surface potential at the InAlN surface. The reduction of positive charge at the InAlN surface is discussed.
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