Abstract
The surface reconstruction during chemical beam etching of GaAs by AsCl 3 is discussed. The existence of reflection high energy electron diffraction (RHEED) intensity oscillation indicates a planar etching mode in the initial stage. Its evolution into a three-dimensional (3D) etching can be understood in terms of suppressed cation diffusion during etch. Appropriate choice of etch parameters that enhance the cation diffusion is the key to obtain smooth etching morphology. The effectiveness of etch cleaning is subjected to the planarity of the surface during etch, and the chemical reactivity of the contaminants with the etching gas. This is illustrated by etching of the Be and Si δ-doped structures in GaAs.
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