Abstract
Background: Al-doped ZnO (AZO) films were successfully deposited on the glass substrates at temperature 400 °C; by aerosol-assisted chemical vapour deposition method. Zinc acetate dihydrate, aluminum nitrate nonahydrate, methanol were used as a starting material and solvent, respectively. The influences of carrier gas (N2) flow rate on the structural, optical and electrical properties of grown AZO films were full investigated. The research results indicated that the growth orientation between polar and nonpolar faces in ZnO crystal exhibited obvious difference with increasing carrier gas flow rate. Additionally, carrier gas transport also had a great effect on crystal quality, surface structure and electrical properties of the sample. The uniform AZO film with the resistivity value of 6.7×10-3 Ω·cm and optical transmittance of 80% in the visible range was obtained at a suitable carrier gas flow rate of 30 L/h. Keywords: AACVD, gas transport, AZO thin films, microstructure, resistivity, transmittance, Al doping.
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