Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

Abstract

AbstractCarbon ion (C+) irradiation during molecular beam epitaxy (MBE) growth of GaAs/GaAs and in0.53.Ga0.47As/InP layers was carried out using CIBMBE (combined ion beam and molecular beam epitaxy) method as a function of wide acceleration energy (Ea=30 eV-30 keV) at a constant ion beam current density. Judging from the monitored current density and the net hole concentration (INA-ND|) obtained from Hall effect measurements, activation rate as high as 88% was achieved for as-grown GaAs layers by C+ ion irradiation of Ea=~170eV. It was revealed that by annealing at 800°C, a slight enhancement (~ 10%) of INA-ND| is practiced for Ea <~ 130eV but a significant increase of INA-ND| is realized for Ea>~lkeV. IN in0.53Ga0.47As/InP layers with increasing Ea, a type conversion of electric conduction from n to p was found to occur at Ea= ~70~100eV. these observations describe that Ea plays a vital role to determine the location of incorporated electrical and optical active impurities in GaAs and inGaAs. Further for comparison, C+-implanted GaAs layers were prepared by high-energy (400 keV) ion-implantation as a function of substrate temperature (T1=RT-600 °C). For C dose concentration of lxl018cm-3\ the highest activation rate of ~20 % was obtained at T1=~150 °C. This result states that CIBMBE method is a superior doping method in view of activation rate of introduced dopants and the formation of damage-free ion-irradiated layers.