Abstract
Experimental results for Si-MOSFETs indicate that breakdown flow occurs at first in the vicinity of the source-drain electrodes. The effect of this inhomogeneous dissipative area on the value of the quantized Hall resistance is demonstrated to be less than a few parts in 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> when the diagonal resistivity ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">xx</sub> is sufficiently small. Measurements by the use of a Josephson potentiometer is possible even in the presence of an appreciable effect of the dissipative region on the shape of the Hall voltage plateau.
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