Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs

Abstract

In this work, we investigate the effect of BOX (Buried OXide) and silicon thickness on the SCE (Short-Channel Effects) of ET-SOI (Extremely Thin Silicon-on-Insulator) MOSFETs. It is found that the minimum channel length Lmin is only moderately sensitive to the BOX thickness but strongly dependent on the silicon thickness. For a given threshold voltage, the choice of gate work function in combination with the backgate bias also plays a role on Lmin. Reverse bias mitigates SCE while forward bias aggravates SCE. An empirical expression of Lmin in terms of silicon thickness is given.