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Abstract
We present the results of a study of the dependence of electron concentration in molecular-beam-epitaxy-grown not-intentionally doped InAs–AlSb quantum-well structures on the top barrier thickness in single-well structures and on the internal barrier thickness in multiwell structures. A contribution from surface donors was found to be dominant in single wells with thin top barriers. The bulk donor concentration in the AlSb barriers varied from 2 × 1015 to 1016 cm−3. Interface donors at the InAs–AlSb heterointerface were also found, with an energetic location below the Fermi level in the wells. They are primarily responsible for the increase of the carrier concentration with increasing temperature.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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