Abstract
One-band effective mass model is used to simulation of electron gas properties in quantum well. We calculate of dispersion curves for first three subbands. Calculation results of Fermi energy, effective mass at Fermi level as function of electron concentration are presented. The obtained results are good agreement with the experimental dates.
Highlights
The In-Plane DispersionConsider a single quantum well (QW) with width L (area A—InAs), concluded between barriers with height V (area B—AlAs)
InAs and InSb of the conduction band are characterized by a strong nonparabolicity and recently intensively studied heterostructures based on them [1]-[3]
In [8] has been investigated InAs/AlSb based quantum well (QW) with well width L = 15 nm, where two dimensional (2D) electron concentration ranges from 2.7 × 1011 to 8 × 1012 cm−2
Summary
Consider a single QW with width L (area A—InAs), concluded between barriers with height V (area B—AlAs). The energy is measured from the bottom of the band of the bulk InAs. In the one band effective mass approximation, the solution of the three-dimensional. Schrödinger equation can be represented as ψ = ei(kxx+ky y)φ ( z ). —energy-dependent effective mass of the electrons in the material A or B. Where, m0 —the free electron mass, EP —the Kane parameter, Eg —the band gap, Δ — the spin-orbital splitting of valence band, V—conduction band offset. To describe the statistics of electrons, Equation (5) is non convenient because it is not solvable with respect to E or k. We replace Equation (5) is by simple approximation mA (E) mA (0)
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