Year-end Sale % OFF 
Abstract
A low axial magnetic field was applied to an inductively coupled plasma (ICP) ion source used to generate a neutral beam for a low-angle forward-reflected neutral (LAFRN) beam system, and its effects on the ICP ion source and the features of Si and SiO2 etching using the LAFRN beam system for SF6 gas were investigated. As a result of applying a low axial magnetic field of approximately 20 G, a significant increase in SF3+ ion flux extracted from the source was observed among the various reactive ions generated using SF6 gas, and the etch rates of Si and SiO2 using a neutral beam formed by the magnetically enhanced SF6 ICP source were also increased. The application of the low axial magnetic field also improved the etch uniformity of the neutral beam etching system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
